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Efficient polarized injection luminescence in forward-biased ferromagnetic-semiconductor junctions at low spin polarization of current

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2 Author(s)
Bratkovsky, A.M. ; Hewlett-Packard Laboratories, 1501 Page Mill Road, 1L, Palo Alto, California 94304 ; Osipov, V.V.

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We consider electron tunneling from a nonmagnetic n-type semiconductor (n-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin n-S layer near FM-S interface at low spin polarization of the current. We show that this effect can be used for an efficient polarization radiation source in a heterostructure where the accumulated spin-polarized electrons are injected from n-S and recombine with holes in a quantum well. The radiation polarization depends on a bias voltage applied to the FM-S junction.

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Applied Physics Letters  (Volume:86 ,  Issue: 7 )