Cart (Loading....) | Create Account
Close category search window
 

Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Zhang, Baijun ; Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan ; Egawa, T. ; Ishikawa, Hiroyasu ; Liu, Yang
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1863412 

Crack-free thin-film InGaN multiple-quantum-well light-emitting diodes (LEDs) were successfully transferred from the original Si (111) substrate onto copper carrier by means of metal-to-metal bonding and the selective lift-off (SLO) technique using wet-chemical etching. Crystalline quality was investigated by x-ray diffraction and photoluminescence measurements. No deterioration was found in the thin film after substrate removal due to the fact that the SLO technique minimizes the residual strain relaxation. Substrate removal eliminates not only the substrate absorption but also the large band offset between the AlN buffer layer and substrate. In conjunction with inserting a metal reflector between the LED structure and the copper carrier, the performances of the LED fabricated on the substrate removal region were significantly improved. The operating voltage at 20 mA and the series resistance was 3.6 V and 27 Ω, respectively. The optical power revealed an increase of 49% compared to the LED before substrate removal.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 7 )

Date of Publication:

Feb 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.