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Tracing deeply buried InAs/GaAs quantum dots using atomic force microscopy and wet chemical etching

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5 Author(s)
Fasching, G. ; Institute of Photonics and Centre for Micro- and Nanostructures, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria ; Unterrainer, K. ; Brezna, W. ; Smoliner, J.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1862332 

We present cross-sectional atomic-force-microscope measurements of buried self-assembled quantum dots. The used method needs a minimum of time and sample preparation (cleaving and etching) to obtain the dot density, dot distribution, and give an estimate of the dot dimensions. Etching only the cleaved surface of the sample opens up the opportunity to determine the properties of a buried dot layer before or even after device fabrication.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 6 )

Date of Publication:

Feb 2005

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