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Highly sensitive time-of-flight secondary-ion mass spectroscopy for contaminant analysis of semiconductor surface using cluster impact ionization

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6 Author(s)
Hirata, K. ; National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan ; Saitoh, Y. ; Chiba, A. ; Narumi, K.
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To compare emission yields of secondary ions from contaminated silicon wafers between cluster and monoatomic ion impacts, pulsed C1+ and C8+ beams are applied to time-of-flight secondary-ion mass spectrometry. C8+ impact of 0.5 MeV/atom provides higher secondary-ion emission yields per incident atom than C1+ impact of 0.5 MeV/atom for organic and metallic contaminants. Higher peak intensities are also observed for a C8+ ion beam with a reduced energy. The enhanced emission yields of secondary ions originating from the contaminants show that mass spectrometry with cluster impact ionization is a powerful analytical tool for highly sensitive detection of the surface contaminants on the silicon wafers.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 4 )

Date of Publication:

Jan 2005

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