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Submicrometer Hall devices fabricated by focused electron-beam-induced deposition

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10 Author(s)
Boero, G. ; Swiss Federal Institute of Technology at Lausanne (EPFL), CH-1015 Lausanne, Switzerland ; Utke, I. ; Bret, T. ; Quack, N.
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Hall devices having an active area of about (500 nm)2 are fabricated by focused electron-beam-induced deposition. The deposited material consists of cobalt nanoparticles in a carbonaceous matrix. The realized devices have, at room temperature, a current sensitivity of about 1 V/AT, a resistance of a few kilo-ohms, and can be biased with a maximum current of about 1 mA. The room-temperature magnetic field resolution is about 10 μT/Hz1/2 at frequencies above 1 kHz.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 4 )