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Study of band structure InxGa1-xN/GaN multiple quantum wells by high-resolution electron microscopy and electron holography

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3 Author(s)
Lu, W. ; Department of Materials Science, College of Materials Science and Engineering, Jilin University, Changchun 130012, China and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, China ; Li, C.R. ; Zhang, Z.

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Two InxGaN1-x/GaN (x=0.15 and 0.18) multiple-quantum-well samples with strained-layer thickness larger/less than the critical thickness, respectively, were investigated by high-resolution electron microscopy, electron holography, and photoluminescence (PL). The PL intensity of the sample with strained-layer thickness larger than the critical thickness was weaker than that of the sample with strained-layer thickness less than the critical thickness by five times. Electron holography revealed that the profiles of the inner potential V0 across the quantum wells GaN/InxGaN1-x/GaN of the samples were not too different. The well feature of the sample with strained-layer thickness larger than the critical thickness was very blurry, especially near the top GaN/InGaN interface. It is suggested that the interface sharpness is most critical for optical property of quantum well devices.

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Applied Physics Letters  (Volume:86 ,  Issue: 4 )