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Demonstration of low-cost Si-based tunable long-wavelength resonant-cavity-enhanced photodetectors

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8 Author(s)
Mao, R.W. ; State Key Joint Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China ; Zuo, Y.H. ; Li, C.B. ; Cheng, B.W.
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A simple process for fabricating low-cost Si-based continuously tunable long-wavelength resonant-cavity-enhanced (RCE) photodetectors has been investigated. High-contrast SiO2/Si(Δn∼2) was employed as mirrors to eliminate the need to grow thick epitaxial distributed Bragg reflectors. Such high-reflectivity SiO2/Si mirrors were deposited on the as-grown InGaAs epitaxy layers, and then were bonded to silicon substrates at a low temperature of 350 °C without any special treatment on bonding surfaces, employing silicate gel as the bonding medium. The cost is thus decreased. A thermally tunable Si-based InGaAs RCE photodetector operating at 1.3–1.6 μm was obtained, with a quantum efficiency of about 44% at the resonant wavelength of 1476 nm and a tuning range of 14.5 nm. It demonstrates a great potential for industry processes.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 3 )

Date of Publication:

Jan 2005

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