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Corner overgrowth: Bending a high mobility two-dimensional electron system by 90°

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5 Author(s)
Grayson, M. ; Walter Schottky Institut, Technische Universität München, D-85748 Garching, Germany ; Schuh, D. ; Huber, M. ; Bichler, M.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1851010 

Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAs/AlGaAs heterojunction overgrown on top of an ex situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp 90° angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Hartree calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of embedded quantum heterostructures.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 3 )

Date of Publication:

Jan 2005

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