By Topic

Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Yoshitake, T. ; Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580, Japan ; Nakagauchi, D. ; Ogawa, T. ; Itakura, M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1978984 

Ferromagnetic Fe3Si thin films with an extremely smooth surface morphology can be epitaxially grown on Si(111) at room temperature by facing target direct-current sputtering. The epitaxial relationship is Fe3Si(111)||Si(111) with Fe3Si[110]||Si[110]. By the application of the extinction rule of x-ray diffraction, the generated Fe3Si was confirmed to possess a B2 structure and not a DO3 one. The film showed a saturation magnetization value of 960 emu/cm3, which was slightly lower than that of bulk DO3-Fe3Si. It was observed that the magnetization easy axis was along the [110] direction in the film plane.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 26 )