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Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering

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8 Author(s)
Yoshitake, T. ; Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580, Japan ; Nakagauchi, D. ; Ogawa, T. ; Itakura, M.
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Ferromagnetic Fe3Si thin films with an extremely smooth surface morphology can be epitaxially grown on Si(111) at room temperature by facing target direct-current sputtering. The epitaxial relationship is Fe3Si(111)||Si(111) with Fe3Si[110]||Si[110]. By the application of the extinction rule of x-ray diffraction, the generated Fe3Si was confirmed to possess a B2 structure and not a DO3 one. The film showed a saturation magnetization value of 960 emu/cm3, which was slightly lower than that of bulk DO3-Fe3Si. It was observed that the magnetization easy axis was along the [110] direction in the film plane.

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Applied Physics Letters  (Volume:86 ,  Issue: 26 )