Cart (Loading....) | Create Account
Close category search window
 

Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Kordoš, P. ; Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava and Institute of Microelectronics, Slovak Technical University, SK-81219 Bratislava, Slovak Republic ; Bernat, J. ; Marso, M. ; Luth, H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1953873 

We report on a correlation between the gate leakage currents and the drain current collapse of GaN/AlGaN/GaN high electron mobility transistors. Unpassivated devices on intentionally undoped and doped (Si, 5×1018 cm-3) heterostructures were investigated. We observed in the devices that the larger the gate leakage current, the smaller the drain current collapse measured at 50 ns gate-voltage pulse turn on, and this correlation is independent of the doping of the structure. The correlation holds for two orders of magnitude in the gate-leakage current and up to 15% in drain current collapse. We believe that the leakage current can modulate trapped surface charge so that the time constant of the current collapse becomes much faster and dependent on the amount of leakage current itself.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 25 )

Date of Publication:

Jun 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.