IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Applied Physics Letters ...> Volume:86 Issue:25 Help

Integration of organic light-emitting diode and organic transistor via a tandem structure

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chu, Chih-Wei ; Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095 ; Chen, Chieh-Wei ; Li, Sheng-Han ; Wu, E.H.-E.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1941461 

A high-performance organic active matrix pixel was fabricated by using a metal oxide (V2O5) coupling layer that effectively integrates an organic light-emitting diode (OLED) on top of an organic field-effect transistor (OFET). The field-effect mobility of the OFET approached 0.5 cm2 V-1 s-1 and the ON/OFF current ratio was ≫103. The brightness of the OLED was on the order of 2000 cd/m2, with an efficiency above 3.3 cd/A. The present work describes in detail a methodology for sizing and stacking an OFET in bottom-emitting active matrix pixel circuits. The confinement of pixel dimension ensures the uniformity of light emission. The material for coupling layer can be tailored to achieve maximum device efficiency. A unique active matrix pixel circuit is proposed that renders both the OFET and OLED their individual performance after integration.

Published in:
Applied Physics Letters  (Volume:86 ,  Issue: 25 )

Date of Publication: Jun 2005

Page(s):
253503 - 253503-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1941461
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jun 2005

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.