Cart (Loading....) | Create Account
Close category search window
 

The effect of Al on Ga desorption during gas source-molecular beam epitaxial growth of AlGaN

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Jenny, J.R. ; Wright Laboratory (WL/AADP), Wright–Patterson Air Force Base, Ohio 45433-7323 ; Van Nostrand, J.E. ; Kaspi, R.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.120652 

In this letter, we report on the impact aluminum has on gallium desorption kinetics in AlGaN alloys grown by gas source-molecular beam epitaxy. Aluminum is found to preferentially incorporate into the AlGaN films over the range of fluxes and temperatures investigated [0.05≤Ji(Ga)≤0.5 ML/s; 0.1≤Ji(Al)≤0.2 ML/s; 700 °C≤Ts≤775 °C]. As a result, Ga is not observed to incorporate into the film until the NH3 flux exceeds that required to grow stoichiometric AlN. This preferential incorporation stems from two facts: (a) Al has an ammonia cracking efficiency ∼2.5 times greater than that of Ga, and (b) Al participates in a Al-for-Ga exchange. As a result of these factors and under NH3 limited growth conditions, the aluminum mole fraction in a layer can be controlled by changing the incident NH3 flux. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:72 ,  Issue: 1 )

Date of Publication:

Jan 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.