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Temperature dependence of mobility in n-type short-period Si–Ge superlattices

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8 Author(s)
Pearsall, T.P. ; Department of Electrical Engineering, University of Washington, Seattle, Washington 98195 ; DiVergilio, A. ; Gassot, P. ; Maude, Duncan
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We have studied the mobility and carrier concentration as a function of temperature between 4 and 300 K in n-type Si–Ge short-period superlattices. In the parallel transport configuration, we have measured a mobility ratio μ77300≫50 in an n-type strained-layer superlattice with a carrier concentration in the mid 1016cm-3 range. The peak mobility measured was 17 000 cm2/V s-1 at 70 K. Carrier freeze-out effects frustrated transport measurements below 60 K. Above 80 K the mobility is limited by optical phonon scattering with a characteristic phonon energy of 60 meV. These characteristics indicate electron transport via extended states. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:72 ,  Issue: 1 )

Date of Publication:

Jan 1998

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