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Efficient route to TlBa2Ca2Cu3O9+x thin films by metal-organic chemical vapor deposition using TlF as a thallination source

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9 Author(s)
McNeely, R.J. ; Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208-3113 ; Belot, J.A. ; Hinds, B.J. ; Marks, T.J.
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Thin TlBa2Ca2Cu3O9+x films were grown on single crystal (110) LaAlO3 from metal-organic chemical-vapor deposition-derived Ba–Ca–Cu–Ox precursor films employing Ba(hfa)2∙mep, Ca(hfa)2∙tet, and Cu(dpm)2 (hfa=hexafluoroacetylacetonate; dpm=dipivaloylmethanate; tet=tetraglyme; mep=methylethylpentaglyme) as the volatile metal sources. Thallination is then accomplished by annealing the precursor films in the presence of a bulk BaO+CaO+CuO+TlF source at 885 °C in flowing O2. The presence of TlF is essential for nucleating the Tl-1223 phase. The resulting Tl-1223 films are nearly phase-pure, highly oriented, epitaxial by x-ray diffraction, and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit a transport measured Tc=103 K and Jc=4.4×104A/cm2 (77 K, 0 T). Magnetic hysteresis measurements yield Jc=1.9×105A/cm2 (30 K, 0.01 T) and show considerable flux pinning at low temperatures with Jc=1.4×105&#x- - 2009;A/cm2 (5 K, 4.5 T). © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 9 )

Date of Publication:

Sep 1997

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