Cart (Loading....) | Create Account
Close category search window

Hot-carrier-induced modifications to the noise performance of polycrystalline silicon thin-film transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Modifications of noise performances induced by hot-carrier degradation in polycrystalline silicon thin-film transistors, made by excimer laser crystallization, are presented. In particular, the normalized drain current spectral density of these devices shows an evident 1/f behavior, and as the device characteristics are degraded by prolonged bias stressing, the noise performances worsen. Hot-carrier degradation results in the formation of both interface states, that have been evaluated through the analysis of the sheet conductance, as well as of oxide traps near the insulator/semiconductor interface, as evidenced by the 1/f noise measurements. A strong correlation between interface state and oxide trap densities has been found, suggesting a common origin for the generation mechanism of the two types of defects. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 9 )

Date of Publication:

Sep 1997

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.