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Browse Journals & Magazines > Applied Physics Letters ...> Volume:71 Issue:8 Help

Field-enhanced Si–Si bond-breakage mechanism for time-dependent dielectric breakdown in thin-film SiO2 dielectrics

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3 Author(s)
McPherson, J.W. ; Texas Instruments, Inc., M/S 385, Dallas, Texas 75243 ; Reddy, V.K. ; Mogul, H.C.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.119739 

A field-enhanced Si–Si bond-breakage mechanism is presented which accurately describes the time-dependent dielectric breakdown behavior recently reported for thin-film SiO2 dielectrics over a wide range of fields and temperatures. The breakdown kinetics (both the field and temperature dependence) are shown to be consistent with a field-dependent dipolar energy term associated with an oxygen vacancy which serves to reduce the activation energy required for Si–Si bond breakage. © 1997 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:71 ,  Issue: 8 )

Date of Publication: Aug 1997

Page(s):
1101 - 1103
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.119739
Date of Current Version :
18 June 2009
Issue Date :
Aug 1997

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