By Topic

Light-hole resonant tunneling through a tensile-strained GaAsP quantum well

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Lampin, J.F. ; Institut d’Electronique et de Microélectronique du Nord, U.M.R. C.N.R.S. 9929, Avenue Poincaré B. P. 69, 59652 Villeneuve d’Ascq Cédex, France ; Mollot, F.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.119734 

We report the demonstration of resonant tunneling of holes through an AlAs/GaAs0.7P0.3 double-barrier heterostructure. The tensile strain in the quantum well is large enough to reverse the order of the light- and heavy-hole levels (the first light-hole level is the ground state). The I(V) characteristic of this structure is measured and compared to a standard AlAs/GaAs unstrained one. As expected, the peak current density of the first light-hole resonance and its peak-to-valley current ratio are enhanced (they reach 28 A/cm2 and 3.4:1 at 15 K). Negative differential resistance is observed up to 250 K. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 8 )