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Light-hole resonant tunneling through a tensile-strained GaAsP quantum well

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2 Author(s)
Lampin, J.F. ; Institut d’Electronique et de Microélectronique du Nord, U.M.R. C.N.R.S. 9929, Avenue Poincaré B. P. 69, 59652 Villeneuve d’Ascq Cédex, France ; Mollot, F.

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We report the demonstration of resonant tunneling of holes through an AlAs/GaAs0.7P0.3 double-barrier heterostructure. The tensile strain in the quantum well is large enough to reverse the order of the light- and heavy-hole levels (the first light-hole level is the ground state). The I(V) characteristic of this structure is measured and compared to a standard AlAs/GaAs unstrained one. As expected, the peak current density of the first light-hole resonance and its peak-to-valley current ratio are enhanced (they reach 28 A/cm2 and 3.4:1 at 15 K). Negative differential resistance is observed up to 250 K. © 1997 American Institute of Physics.

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Applied Physics Letters  (Volume:71 ,  Issue: 8 )