Epitaxial growth of Y₂O₃ films on Si(100) without an interfacial oxide layer

Heteroepitaxial Y₂O₃ films were grown on Si(100) substrates by the technique of reactive ionized cluster beam deposition. The crystallinity of the films was investigated with reflection high energy electron diffraction (RHEED), glancing angle x-ray diffraction (GXRD), and the interface was examined by high resolution transmission electron microscopy (HRTEM). Under the condition of 5 kV acceleration voltage at the substrate temperature of 800 °C, the Y₂O₃ film grows epitaxially on the Si(100) substrate. RHEED and GXRD results revealed that the epitaxial relationship between Y₂O₃ and Si(100) is Y₂O₃(110)//Si(100), and HRTEM observation showed a sharp interface without an amorphous layer. © 1997 American Institute of Physics.