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Carrier capture in pseudomorphically strained wurtzite GaN quantum-well lasers

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3 Author(s)
Wang, Jin ; Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911 ; Kim, K.W. ; Littlejohn, M.A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.119657 

The generalized photon-carrier rate-equation formalism is used to evaluate the carrier capture process in pseudomorphically strained wurtzite GaN quantum-well lasers. Our results show that both the carrier capture time and the carrier escape time vary significantly with the injected carrier density and strain-induced piezoelectric field. Thus, it is demonstrated that in place of the flatband conditions adopted in most treatments, a self-consistent adjustment of the carrier capture process is essential for achieving an accurate description of carrier dynamics in wurtzite GaN quantum-well lasers. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 6 )

Date of Publication:

Aug 1997

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