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Browse Journals & Magazines > Applied Physics Letters ...> Volume:71 Issue:6 Help

Room temperature differential negative resistance in an Al/Zn0.61Cd0.39Se/n+-InP device

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5 Author(s)
Shum, Kai ; Department of Electrical Engineering, City College and Graduate Center of The City College of the City University of New York, New York, New York 10031 ; Zhou, J. ; Zhang, W. ; Zeng, L.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.119655 

Experimental data are presented on the current–voltage characteristics of an Al/ZnCdSe/n+-InP device from 77 to 300 K. A strong negative differential resistance under forward bias was observed for temperature higher than 145 K. The peak-to-valley current ratio was measured to be 30 at room temperature. In the reverse bias region the device behaves as a leaky Schottky diode. © 1997 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:71 ,  Issue: 6 )

Date of Publication: Aug 1997

Page(s):
815 - 816
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.119655
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Aug 1997

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