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Electron field emission characteristics of planar diamond film array synthesized by chemical vapor deposition process

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3 Author(s)
Lee, J.S. ; Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300, Republic of China ; Liu, K.S. ; Lin, I.N.

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Selected area deposition of diamond films on silicon substrates was successfully achieved using the patterned Pt layer as a nucleation inhibitor in the chemical vapor deposition process. The planar diamond film array thus made possesses good electron field emission properties, that is, emission current density of (Je)Si=150 μA/cm2 (under 23.6 V/μm) and turn on field of (Eo)Si=10 V/μm. Precoating a thin Au layer (20 nm) on a Si surface further increased the emission current density to (Je)Au/Si=960 μA/cm2 (under 23.6 V/μm) with (Eo)Au/Si=10 V/μm. The effective work functions (Φ) estimated by Fowler–Nordheim plots of the I–V characteristics are (Φ)Si=0.059 eV and (Φ)Au/Si=0.085 eV. The emission properties of both planar diamond film arrays satisfy the requirement for applying as the electron emitters in the flat panel displays. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 4 )