By Topic

Far-infrared study of a laterally confined electron gas formed by molecular beam epitaxial regrowth on a patterned (100) n+-GaAs substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Arnone, D.D. ; Toshiba Cambridge Research Centre, Ltd., 260 Cambridge Science Park, Cambridge CB4 4WE, United Kingdom ; Cina, S. ; Burroughes, J.H. ; Holmes, S.N.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A method of producing lateral confinement of an electron gas has been realized by using molecular beam epitaxy to grow a high mobility heterostructure on a (100) n+-GaAs layer selectively etched to create a two-dimensional array of cavities through the n+-GaAs, which are bound by higher index facets. Far-infrared cyclotron resonance (CR) spectra unambiguously demonstrate that the electron gas formed inside the cavities is confined in both lateral directions. Typical confinement energies of 30 cm-1 and widths of 2000 nm are derived from the spectra and magnetoresistance measurements. The effect of different n+-GaAs backgate biases is also investigated. Combining information from CR spectra with atomic force microscopy images provides a picture of the nature of the lateral confinement in this structure. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 4 )