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Manipulation of final state population in semiconductor heterostructures by pulsed laser fields

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1 Author(s)
Potz, W. ; Physics Department, University of Illinois at Chicago, Chicago, Illinois 60607

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.119548 

Proper combination of pulsed laser fields allows optical control of electron inter(sub)band transitions in semiconductors leading to control of final state population. Based on a microscopic theory, we show that the final ratio of direct versus indirect excitons generated by a subpicosecond pump pulse in semiconductor double wells can be manipulated by simultaneous application of a resonant microwave pulse. Generalization and relevance of this result to other inter– and intersubband transitions is discussed. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 3 )

Date of Publication:

Jul 1997

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