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Dielectric properties of silicon nitride films deposited by microwave electron cyclotron resonance plasma chemical vapor deposition at low temperature

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5 Author(s)
Ye, Chao ; Department of Physics, Laboratory of Film Materials, Suzhou University, Suzhou 215006, People’s Republic of China ; Ning, Zhaoyuan ; Shen, Mingrong ; Wang, Hao
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The dielectric properties of amorphous silicon nitride (SiNx) films that were prepared by microwave electron cyclotron resonance plasma chemical vapor deposition at low temperature in the frequency range 5 Hz–1 MHz have been investigated. The dielectric dispersion in the frequency range exhibits two fractional power laws of )∝ω-p1 and )∝ωn1-1 with p1=0.12–0.18 and n1=0.95–0.96. These are close to the result predicted by the many-cluster anomalous conduction theory of fractal structure. © 1997 American Institute of Physics.

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Applied Physics Letters  (Volume:71 ,  Issue: 3 )