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The effect of power supply voltage scaling on the total dose radiation response of fully-depleted SOI MOS transistors

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2 Author(s)
S. T. Liu ; Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA ; W. C. Jenkins

The radiation induced front channel threshold voltage shift (ΔVtl) of fully-depleted MOSFETs fabricated in SIMOX is investigated and analyzed as a function of power supply voltage (VDD) from 5.5 to 1.2 volts. This work shows that the expected improvement in front channel radiation hardness by reducing V DD is not fully realized due to (1) a radiation induced off-set voltage at VDD~0 V, and (2) enhanced coupling of the buried oxide charge to the front channel

Published in:

IEEE Transactions on Nuclear Science  (Volume:42 ,  Issue: 6 )