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Particle dependence of the gallium vacancy production in irradiated n-type gallium arsenide

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6 Author(s)
Khanna, S.M. ; Defence Res. Establ., Ottawa, Ont., Canada ; Jorio, A. ; Carlone, C. ; Parenteau, M.
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The relative introduction rate of the gallium vacancy in n-type GaAs irradiated with 60Co γ rays, 7 MeV electrons, fusion (14 MeV) and fission (1 MeV) neutrons, protons (0.6 to 200 MeV), deuterons (1 to 10 MeV), α particles (2.5 to 10 MeV), lithium (5 to 20 MeV) and oxygen ions (10 to 30 MeV) has been determined. Effects of annealing are reported. The measured introduction rates obtained with proton irradiation for energies up to 10 MeV, and for the heavy ions agree reasonably well with Rutherford scattering, NIEL calculations and the TRIM simulation. The results for electron irradiation also agree with the corresponding NIEL calculations

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Nuclear Science, IEEE Transactions on  (Volume:42 ,  Issue: 6 )

Date of Publication: Dec 1995

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