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Photoluminescence spectra of tailored Ga(A1)P/GaP quantum well heterostructures exhibit strong short-wavelength peaks at 363, 560, and 600-700 nm. The peak at 560 nm seems to originate from a no-phonon transition. All the transitions are observed up to 200 K. Light emitting diodes made with the same heterostructure predominently emit 560 nm light (green) with a background of 700 nm (red) at room temperature under cw operation. © 1997 American Institute of Physics.
Published in:
Applied Physics Letters
(Volume:71
,
Issue:
22
)
Date of Publication: Dec 1997
- Page(s):
- 3260 - 3262
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.120320
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Dec 1997
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