Cart (Loading....) | Create Account
Close category search window
 

Evolution of defect-related structure in the x-ray absorption spectra of buried SiNx films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Paloura, E.C. ; Department of Physics, Aristotle University of Thessaloniki, GR-54006 Thessaloniki, Greece

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.120292 

Near-edge x-ray absorption fine structure measurements at the N-K edge are used to monitor the evolution of defect-related structure in the spectra of buried SiNx films as a function of the implantation dose. The buried SiNx films were fabricated with implantation of 35 keV 14N+ ions in Si in the dose range 2×1017–2×1018cm-2. The defect-related resonances RL1 and RL2 appear at 401.1±0.3 and 403.3±0.1 eV, respectively. The RL1 is characteristic of a defect structure in the low and intermediate implantation doses and can be annealed out with an activation energy of 0.5 eV. RL2, which is the signature of excess N in N-rich films and is attributed to transitions of 1s-electrons to unfilled states with p component at a defect site containing a N dangling bond, can be annealed out only after prolonged annealing at 1150 °C. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 22 )

Date of Publication:

Dec 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.