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Browse Journals & Magazines > Applied Physics Letters ...> Volume:71 Issue:21 Help

Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation density

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6 Author(s)
Li, J.H. ; Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080, People’s Republic of China ; Peng, C.S. ; Wu, Y. ; Dai, D.Y.
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Si0.7Ge0.3 epilayers with low threading dislocation density have been grown on Si (001) substrates by introducing a low temperature Si buffer. Such a structure can be used as the buffer for the growth of device structures. In comparison with the conventional compositionally graded buffer system, it has the advantages of having lower threading dislocation density, smaller thickness for required degree of relaxation, and smoother surface. Experimental evidence suggests that an anomalous relaxation mechanism has been involved.

Published in:
Applied Physics Letters  (Volume:71 ,  Issue: 21 )

Date of Publication: Nov 1997

Page(s):
3132 - 3134
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.120268
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 1997

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