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Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

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8 Author(s)
C. Dachs ; Centre d'Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France ; F. Roubaud ; J. -M. Palau ; G. Bruguier
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2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEE). SEE parametric dependencies such as carrier lifetime reduction, base enlargement, and emitter doping decrease have been verified and a p+ plug modification approach for SEE hardening of power MOSFETs is validated with simulations on actual device structures

Published in:

IEEE Transactions on Nuclear Science  (Volume:42 ,  Issue: 6 )