By Topic

Atomic force microscope tip-induced local oxidation of silicon: kinetics, mechanism, and nanofabrication

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Avouris, P. ; IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598 ; Hertel, T. ; Martel, Richard

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.119521 

Atomic force microscope induced local oxidation of silicon is a process with a strong potential for use in proximal probe nanofabrication. Here we examine its kinetics and mechanism and how such factors as the strength of the electric field, ambient humidity, and thickness of the oxide affect its rate and resolution. Detection of electrochemical currents proves the anodization character of the process. Initial very fast oxidation rates are shown to slow down dramatically as a result of a self-limiting behavior resulting from the build up of stress and a reduction of the electric field strength. The lateral resolution is determined by the defocusing of the electric field in a condensed water film whose extent is a function of ambient humidity. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 2 )