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Planar anisotropic oxidation of graded AlGaAs for high resolution vertical-wall current and light guiding in laser diodes

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2 Author(s)
Evans, P.W. ; Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801 ; Holonyak, N.

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Data are presented on the planar (top–down) oxidation of graded AlxGa1-xAs upper confining layers of quantum well heterostructures in order to realize high resolution square-edge lasers (or waveguides). A model is developed to facilitate composition grading of AlxGa1-xAs for vertical-wall (square corner or edge) planar oxidation at convenient oxidation times and tolerances. A simple AlGaAs–GaAs quantum well laser structure is used to demonstrate the square-wall (square-corner) planar oxidation method. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 2 )