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Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers

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4 Author(s)
Grandjean, N. ; Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue B. Grégory-Sophia Antipolis, 06560 Valbonne, France ; Leroux, M. ; Laugt, M. ; Massies, J.

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Wurtzite GaN was grown by gas source molecular beam epitaxy on (0001) sapphire substrates. Taking advantage of the catalytic decomposition of ammonia on the growing surface, high growth rates (≫1 μm/h) were achieved for substrate temperatures ranging between 800 and 850 °C. Surface morphology, structural, and optical properties of thick (2–4 μm) GaN films were investigated versus the growth temperature of the GaN buffer layer. It is shown that this parameter has a drastic influence on the GaN properties. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 2 )

Date of Publication:

Jul 1997

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