Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.119526
Wurtzite GaN was grown by gas source molecular beam epitaxy on (0001) sapphire substrates. Taking advantage of the catalytic decomposition of ammonia on the growing surface, high growth rates (≫1 μm/h) were achieved for substrate temperatures ranging between 800 and 850 °C. Surface morphology, structural, and optical properties of thick (2–4 μm) GaN films were investigated versus the growth temperature of the GaN buffer layer. It is shown that this parameter has a drastic influence on the GaN properties. © 1997 American Institute of Physics.