By Topic

SiO2 film thickness metrology by x-ray photoelectron spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Lu, Z.H. ; Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada ; McCaffrey, J.P. ; Brar, B. ; Wilk, G.D.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Silicon dioxide films grown by industrial thermal furnace, rapid thermal, and low-pressure thermal methods were measured by x-ray photoelectron spectroscopy, transmission electron microscopy (TEM), spectroscopic ellipsometry, and capacitance–voltage analysis. Based on TEM measurements, the photoelectron effective attenuation lengths in the SiO2 and Si are found to be 2.96±0.19 and 2.11±0.13 nm, respectively. The oxide physical thicknesses (range from 1.5 to 12.5 nm) as measured by all above techniques are in good agreement. The electrical thickness is noted to be slightly thicker than the physical thickness. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 19 )