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Heavy ion SEU immunity of a GaAs complementary HIGFET circuit fabricated on a low temperature grown buffer layer

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9 Author(s)
Marshall, P.W. ; Naval Res. Lab., Washington, DC, USA ; Dale, C.J. ; Weatherford, T. ; Carts, M.
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We compare dynamic SEU characteristics of GaAs complementary HIGFET devices fabricated on conventional semi-insulating substrates versus low temperature grown GaAs (LT GaAs) buffer layers. Heavy ion test results on shift register and flip-flop devices from the same process lot demonstrate that the LT GaAs layer provides immunity from upsets, even at an LET value of 90 MeV·cm2/mg. This result is also consistent with pulsed laser measurements performed on the same flip-flop circuits used in the ion test

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Nuclear Science, IEEE Transactions on  (Volume:42 ,  Issue: 6 )