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Electron-wave interference effects in a Ga1-xAlxAs single-barrier structure measured by ballistic electron emission spectroscopy

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5 Author(s)
Guthrie, D.K. ; Microelectronics Research Center and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250 ; First, P.N. ; Gaylord, T.K. ; Glytsis, E.N.
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Ballistic electron emission spectroscopy (BEES) has been performed on a GaAs/Ga0.8Al0.2As/GaAs single-barrier structure at 77 and 7 K. The single-interface model widely used for such structures was found to be inadequate in describing the BEES second-derivative spectrum. A more complete model that incorporates electron-wave interference effects is shown to describe the data accurately and consistently over many spatial locations and samples. This model reproduces all measured features in the BEES second-derivative spectrum resulting from electron-wave interference. At 77 K (7 K) the conduction band offset for x=0.2 is determined to be 145 meV or Qc=0.58 (150 meV or Qc=0.60) in agreement with accepted values. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 16 )