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Tuning self-assembled InAs quantum dots by rapid thermal annealing

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4 Author(s)
Malik, Surama ; IRC for Semiconductor Materials, The Blackett Laboratory, Imperial College, London SW7 2B7, United Kingdom ; Roberts, Christine ; Murray, Ray ; Pate, Malcolm

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.119763 

Blueshifts in the photoluminescence emission energies from an ensemble of self-assembled InAs quantum dots are observed as a result of postgrowth thermal annealing. Enhancement of the integrated photoluminescence emission and narrowing of the full width half-maxima (from 55 to 12 meV) occur together with blueshifts up to 300 meV at annealing temperatures up to 950 °C. Evidence that the structures remain as dots comes form the observation of level filling and photoluminescence excitation studies which reveal LO phonon peaks occurring at multiples of ∼30 meV from the detection energies. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 14 )

Date of Publication:

Oct 1997

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