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Sealing of AlAs against wet oxidation and its use in the fabrication of vertical-cavity surface-emitting lasers

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5 Author(s)
Lim, Dae Ho ; Department of Semiconductor Science and Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea ; Yang, Gye Mo ; Kim, Jong-Hee ; Lim, Kee Young
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We have studied the process of sealing an exposed AlAs to prevent further wet oxidation. A critical step in this sealing process consists of the first wet oxidation for a short time at 408 °C in a steam environment of a previously room-ambient exposed AlAs surface. During this brief wet oxidation, a dense oxide surface barrier with a thickness of 1.1 μm is formed, which further blocks diffusing oxygen species during the second wet oxidation. The effectiveness of the sealing is demonstrated through its use as a mask against wet oxidation in the fabrication of oxide-confined vertical-cavity surface-emitting lasers. © 1997 American Institute of Physics.

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Applied Physics Letters  (Volume:71 ,  Issue: 14 )