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Nanoscale silicon field effect transistors fabricated using imprint lithography

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3 Author(s)
Guo, Lingjie ; Department of Electrical Engineering, Nanostructure Laboratory, University of Minnesota, Minnesota 55455 ; Krauss, Peter R. ; Chou, S.Y.

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We report the fabrication and characterization of nanoscale silicon field effect transistors using nanoimprint lithography. With this lithographic technique and dry etching, we have patterned a variety of nanoscale transistor features in silicon, including 100 nm wire channels, 250-nm-diam quantum dots, and ring structures with 100 nm ring width, over a 2×2 cm lithography field with good uniformity. Compared with devices fabricated by the conventional electron-beam lithography, we did not observe any degradation in the device characteristics. The successful fabrication of the semiconductor nanodevices represents a step forward to make nanoimprint lithography a viable technique for the mass production of semiconductor devices. © 1997 American Institute of Physics.  

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 13 )

Date of Publication:

Sep 1997

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