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A study on Au/Ni/Au/Ge/Pd ohmic contact and its application to AlGaAs/GaAs heterojunction bipolar transistors

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4 Author(s)
Kim, Il-Ho ; Semiconductor Division, Electronics and Telecommunications Research Institute, 161 Kajong-dong, Yusong-gu, Taejon 305–350, Korea ; Park, Sung Ho ; Lee, Tae-Woo ; Park, Moon-Pyung

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An Au/Ni/Au/Ge/Pd ohmic contact system on n-type InGaAs was studied and applied to AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Good ohmic behavior was achieved by rapid thermal annealing (RTA) at temperatures up to 400 °C, and the specific contact resistance was reduced to low-10-6 Ω cm2. However, by annealing at temperatures above 400 °C the characteristics were deteriorated by intermixing and phase reaction of the ohmic metals and InGaAs substrate. The HBTs using the Au/Ni/Au/Ge/Pd ohmic contact scheme showed reliable dc and rf performances with strong dependence on the ohmic contact, especially emitter ohmic contact with RTA temperature. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 13 )

Date of Publication:

Sep 1997

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