By Topic

GaN and AlxGa1-xN molecular beam epitaxy monitored by reflection high-energy electron diffraction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Grandjean, N. ; Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de La Recherche Scientifique, Rue B. Grégory-Sophia Antipolis, 06560 Valbonne, France ; Massies, J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.119408 

GaN and AlxGa1-xN alloys were grown by gas source molecular beam epitaxy using NH3. High quality GaN layers with smooth surfaces being obtained, reflection high-energy electron diffraction (RHEED) can be used to monitor the growth. The oscillations of the specular beam intensity indicate a layer-by-layer growth which allows one to precisely measure the deposition rate and the composition of AlxGa1-xN alloys. The transition from two dimensional nucleation to step flow growth mode when increasing the substrate temperature is also evidenced. Finally, RHEED is used to investigate the relaxation processes which take place during the growth of AlN on GaN and GaN on AlN. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 13 )