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Stress mapping of chemical-vapor-deposited diamond film surface by micro-Raman spectroscopy

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5 Author(s)
Vlasov, I.I. ; General Physics Institute, RAS, 117942 Moscow, Russia ; Ralchenko, V.G. ; Obraztsova, E.D. ; Smolin, A.A.
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A confocal Raman spectroscopy was used to measure intrinsic stress distribution on the growth surface within individual grains of chemical-vapor-deposited diamond film. Polarization analysis of the Raman line shape revealed that even in high quality (2.8 cm-1 linewidth), free-standing film of 0.6 mm thickness, small regions exist where high local stresses (both compressive and tensile) develop. The stressed regions tend to appear near crystal edges and grain boundaries. A strong gradient in defect or impurity concentrations is supposed to cause the stress fluctuations observed. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 13 )

Date of Publication:

Sep 1997

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