By Topic

Optical measurement of effective recombination lifetime in silicon epitaxial layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Cutolo, A. ; Dipartimento di Ingegneria Elettronica, University of Naples “Federico II,” Via Claudio, 21, 80125 Naples, Italy ; Irace, A. ; Spirito, P. ; Zeni, L.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.119795 

In this letter we present a novel all-optical pump-probe technique for the measurement of effective recombination lifetime in silicon epitaxial layers. The procedure is based on the measurement of the variation of the attenuation coefficient due to optically injected free carriers of a planar dielectric waveguide defined by the epitaxial layer cladded between the substrate and the air. Perturbation theory is used to take into account nonuniform refractive index distribution due to nonzero surface recombination. The measurement technique is validated by both numerical simulation and experimental results. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 12 )