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Effects of O2 on the {113} defect formation in Si observed by in situ ultrahigh vacuum transmission electron microscopy

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4 Author(s)
Koto, K. ; Department of Physics, Graduate School of Science, Osaka University, 1-16 Machikane-yama, Toyonaka, Osaka 560, Japan ; Takeda, S. ; Ichihashi, T. ; Iijima, S.

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The nucleation and growth of the {113} defects in floating zone Si have been observed in situ in a ultrahigh vacuum (UHV) transmission electron microscopy. After the surfaces of a Si foil are controlled, intense irradiation of 200 keV electrons proceeds at 400 or 500 °C in the base pressure of 1.0×10-7Pa. We have found that the defect development changes prominently after O2 is injected in a specimen chamber. While O2 flows, the pressure is kept at about 5.0×10-5Pa. This result has brought direct evidence for the effect of O2 on formation of the defects, since no other impurities are involved in the UHV environment. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 12 )

Date of Publication:

Sep 1997

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