By Topic

Influence of separate confinement heterostructures on the effective carrier recombination coefficient in quantum well laser structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yamamoto, Tsuyoshi ; Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan ; Odagawa, T. ; Tanaka, K. ; Ogita, S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.119960 

We analyzed the carrier recombination coefficient of quantum well laser structures by combining two-level ambipolar rate equations and a carrier diffusion equation for the separate confinement heterostructure (SCH) layer. We derived a new analytical expression for the effective carrier recombination coefficient (Beff) in quantum well laser structures. From our analysis, we found out that the dominant factor that determines Beff is not the diffusion across the SCH layer but the ratio of confined carriers in the well to the total carriers in both the well and the SCH layers. Our new expression well explained the measured results of 1.3 μm strained-layer quantum well lasers with SCH layers of different thicknesses. © 1997 American Institute of Physics.  

Published in:

Applied Physics Letters  (Volume:71 ,  Issue: 11 )