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Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale

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3 Author(s)
Kasu, M. ; NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan ; Makimoto, T. ; Kobayashi, N.

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A technique for the selective-area growth of GaAs on a nanometer scale is described. The technique comprises nitrogen (N)-passivation mask formation, scanning-tunneling-microscopy (STM) pattern modification, and metalorganic molecular-beam epitaxy. GaAs (001) surfaces are passivated with N radicals dissociated from N2 molecules and are modified by STM on a nanometer scale. GaAs nanostructures are then grown on the modified areas using trimethylgallium and tertiarybutylarsine. Uniform 6-nm-high and 50×50-nm2 dots were formed on 50×50-nm2 STM-modified areas. The advantage of the technique is that size-controlled nanostructures can be fabricated in specific positions and these nanostructures are free from contamination because all processes are performed in a vacuum. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 9 )

Date of Publication:

Mar 1997

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