By Topic

Very high (≫1019 cm-3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Malik, R. ; Department of Chemical Engineering and the Center for Display Technology and Manufacturing, University of Michigan, Ann Arbor, Michigan 48109 ; Gulari, E. ; Bhattacharya, P. ; Linder, K.K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.119074 

The use of supersonically injected pulses of phosphine to achieve uniform and high levels of n-type doping in Si during gas-source molecular beam epitaxy is demonstrated. Uniform n-type doping up to levels of 5×1019 cm-3 is obtained. SiGe/Si junction diodes made with this doping technique show good doping profiles and rectifying characteristics.© 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 9 )