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Browse Journals & Magazines > Applied Physics Letters ...> Volume:70 Issue:9 Help

Very high (≫1019 cm-3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine

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5 Author(s)
Malik, R. ; Department of Chemical Engineering and the Center for Display Technology and Manufacturing, University of Michigan, Ann Arbor, Michigan 48109 ; Gulari, E. ; Bhattacharya, P. ; Linder, K.K.
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The use of supersonically injected pulses of phosphine to achieve uniform and high levels of n-type doping in Si during gas-source molecular beam epitaxy is demonstrated. Uniform n-type doping up to levels of 5×1019 cm-3 is obtained. SiGe/Si junction diodes made with this doping technique show good doping profiles and rectifying characteristics.© 1997 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:70 ,  Issue: 9 )

Date of Publication: Mar 1997

Page(s):
1149 - 1151
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.119074
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Mar 1997

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