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Very high (≫1019 cm-3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine

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5 Author(s)
Malik, R. ; Department of Chemical Engineering and the Center for Display Technology and Manufacturing, University of Michigan, Ann Arbor, Michigan 48109 ; Gulari, E. ; Bhattacharya, P. ; Linder, K.K.
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The use of supersonically injected pulses of phosphine to achieve uniform and high levels of n-type doping in Si during gas-source molecular beam epitaxy is demonstrated. Uniform n-type doping up to levels of 5×1019 cm-3 is obtained. SiGe/Si junction diodes made with this doping technique show good doping profiles and rectifying characteristics.© 1997 American Institute of Physics.

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Applied Physics Letters  (Volume:70 ,  Issue: 9 )