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Delayed luminescence induced by intersubband optical excitation in a charge transfer double quantum well structure

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4 Author(s)
Rufenacht, M. ; Research Center for Advanced Science and Technology, University of Tokyo and Quantum Transition Project, JRDC, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan ; Tsujino, S. ; Ohno, Y. ; Sakaki, H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.118505 

Photoluminescence processes in a novel GaAs double quantum well (DQW) structure were studied and found to be controlled by a 10 μm mid-infrared (MIR) light. In this DQW structure, photogenerated electron-hole pairs are normally separated into different wells and their radiative recombination is inhibited. However, when a MIR light pulse is supplied to induce an electron intersubband transition, electrons are efficiently transferred to the hole-rich well, resulting in a significant enhancement of luminescence. By time shifting the MIR pulse with respect to the light pulse for interband excitation, we demonstrated the generation of a delayed photoluminescence. Device potentials of this MIR to near-infrared conversion are discussed. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 9 )

Date of Publication:

Mar 1997

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