By Topic

Thin film growth of semiconducting Mg2Si by codeposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Vantomme, Andre ; Instituut voor Kern- en Stralingsfysika, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium ; Mahan, John E. ; Langouche, Guido ; Becker, James P.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Ultrahigh vacuum evaporation of magnesium onto a hot silicon substrate (≥200 °C), with the intention of forming a Mg2Si thin film by reaction, does not result in any accumulation of magnesium or its silicide. On the other hand, codeposition of magnesium with silicon at 200 °C, using a magnesium-rich flux ratio, gives a stoichiometric Mg2Si film which can be grown several hundreds of nm thick. The number of magnesium atoms which condense is equal to twice the number of silicon atoms which were deposited; all the silicon condenses while the excess magnesium in the flux desorbs. The Mg2Si layers thus obtained are polycrystalline with a (111) texture. From the surface roughness analysis, a self-affine growth mode with a roughness exponent equal to 1 is deduced. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 9 )