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Surface states and space charge layer dynamics on Si(111)2×1: A free electron laser-synchrotron radiation study

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10 Author(s)
Marsi, M. ; Sincrotrone Trieste, Padriciano 99, I-34012 Trieste, Italy ; Couprie, M.E. ; Nahon, L. ; Garzella, D.
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Combining the use of a UV storage ring free electron laser and of synchrotron radiation, a time resolved core level spectroscopy study has been performed on photoexcited Si(111)2×1 surfaces with subnanosecond resolution. This enabled us to measure band bending fluctuations, caused by surface carrier dynamics, during the first nanosecond after photoexcitation; differences in the Si2p core level lineshape, dependent on the pump-probe time delay, were also observed. The presence of defects was found to reduce the fluctuations and make the carrier recombination process faster. © 1997 American Institute of Physics.

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Applied Physics Letters  (Volume:70 ,  Issue: 7 )